GB25RF120K |
RFQ for GB25RF120K |
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| Product | Manufacturers | Pack | D/C |
| GB25RF120K | - | - | - |
Features |
| • Low VCE (on) Non Punch Through IGBT Technology• Low Diode VF• 10µs Short Circuit Capability• Square RBSOA• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics• Positive VCE (on) Temperature Coefficient• Ceramic DBC Substrate• Low Stray Inductance Design |
|
Parameter |
Symbol |
Test Conditions |
Ratings |
Units | ||
|
Inverter |
Collector-to-Emitter Voltage |
VCES |
V | |||
| Gate-to-Emitter Voltage |
VGES |
±20 |
||||
| Collector Current |
IC |
Continuous |
25 / 80 |
40 / 25 |
A | |
|
ICM |
25 |
80 | ||||
| Diode Maximum Forward Current |
IFM |
25 |
80 | |||
| Power Dissipation |
PD |
1 device |
25 |
198 |
W | |
|
Input Rectifier |
Repetitive Peak Reverse Voltage |
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SupplierPost a Buying Lead | ||||